NDS331N 20V N-Channel MOSFET 1.6A Continuous 0.25Ω Rds(on) SOT-23 1.8V Logic Level -55°C to +150°C

NDS331N 20V N-Channel MOSFET 1.6A Continuous 0.25Ω Rds(on) SOT-23 1.8V Logic Level -55°C to +150°C

Features

 1.3 A, 20 V

 RDS(on) = 0.21 @ VGS = 2.7 V

 RDS(on) = 0.16 @ VGS = 4.5 V

 Industry Standard Outline SOT−23 Surface Mount Package Using Proprietary SUPERSOT −3 Design for Superior Thermal and Electrical Capabilities

 High Density Cell Design for Extremely Low RDS(on)

 Exceptional On−Resistance and Maximum DC Current Capability

 This is a Pb−Free Device

General Description

These N−Channel logic level enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in−line power loss are needed in a very small outline surface mount package.

APPLICATIONS

Portable Electronics

Load switching: Power management in smartphones, TWS earphones

Battery Protection: Acts as switch in charge/discharge paths (supports 1.6A continuouscurrent).

Low-Power DC-DC Conversion

Synchronous Rectification: Paired with Buck/Boost chips (e.g., TPS61093) to improveefficiency via 0.250 Rds(on).

Level shifting: Compatible with 1.8V/3.3V/5V logic systems for signal isolation.

Sensor & Signal Processing

Sensor Power switching: Energy-saving control for temp/humidity sensors, optical modules.

Analog switching: Replaces mechanical relays in low-voltage (<20V) signal paths.

Industrial Control

PLC l/O Interfaces: Drives LEDs or small relays (requires flyback diode).
Low-Side Switching: Controls fans, small motors, etc.

INFORMATION

Drawing

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